≤ 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the structure is cycled as a result of oxidizing and annealing phases. As a result of preferential oxidation of Si above Ge [68], the first Si1–summary = "We examine the optical get of tensile-strained, n-type Ge product for Si-sui